| PART |
Description |
Maker |
| 10JDA10 |
DIODE - 1A 100V TJ = 150C
|
NIEC[Nihon Inter Electronics Corporation]
|
| SUD45P03-15A |
P-Channel 30-V (D-S) 150C MOSFET
|
Vishay
|
| 20KDA60 |
DIODE - 2A 600V TJ = 150C
|
NIEC[Nihon Inter Electronics Corporation]
|
| 10DDA60 |
From old datasheet system
DIODE - 1A 600V TJ = 150C
|
NIEC[Nihon Inter Electronics Corporation]
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
| MUR820 FN1355 RURP820 |
8A, 200V Ultrafast Diodes(8A, 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| C0603C102J5HACTU |
Ceramic, 150C-(CxxxxC), 1000 pF, 5%, 50 V, 0603, X8R, SMD, MLCC, High Temperature, Ultra-Stable
|
Kemet Corporation
|
| 10JDA60 |
DIODE - 1A 600V TJ = 150C 1 A, 600 V, SILICON, SIGNAL DIODE
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
| 10EDB60 |
Long Life Miniature Relay, Plug-In 0.9 A, 600 V, SILICON, SIGNAL DIODE
DIODE - 1A 600V TJ =150C
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
| BYW51-200 |
8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
| FQPF32N20C FQP32N20C |
200V N-Channel Advance Q-FET C-Series
From old datasheet system
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
